Piezoresponse Force Microscopy (PFM) can be employed to study multi- domain structures and domain distributions of the ferroelectric thin film using AFM technique. The local polarization on the film can be generated by applying dc voltage between the electrode of AFM and the sample.

PFM can be employed to study multi- domain structures and domain distributions of the ferroelectric thin film using AFM technique. The local polarization on the film can be generated by applying dc voltage between the electrode of AFM and the sample.

The polarized ferroelectric film is then characterized by AFM using a two- pass method. In the first pass, the surface morphology can be recorded in contact mode with a fixed set point. In the second pass, a piezoelectric image can be obtained under the piezo- response mode, during which the sample surface is scanned by applying ac voltage between the AFM tip and sample at sample displacement.

Piezoelectric induced images of various sample displacement corresponding to the different stress exerted by the tip on the sample surface, can be recorded and analyzed by force- sample displacement curve.